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dc.contributor.authorVilla Benito, Enrique 
dc.contributor.authorAja Abelán, Beatriz 
dc.contributor.authorCagigas Ibañez, Jaime 
dc.contributor.authorFuente Rodríguez, Luisa María de la 
dc.contributor.authorArtal Latorre, Eduardo 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2014-10-31T18:23:07Z
dc.date.available2014-10-31T18:23:07Z
dc.date.issued2014-09
dc.identifier.isbn978-84-9048-264-3
dc.identifier.otherCSD2010-00064es_ES
dc.identifier.urihttp://hdl.handle.net/10902/5454
dc.description.abstractThis work describes the modelling of a Schottky diode at room (300 K) and cryogenic (15 K) temperatures for its use in a 90º phase switch working in the Ka-band. The phase switch is based on the combination of filters as phase shifting branches and a single-pole double-throw (SPDT) switch with Schottky diodes as switching devices. The MA4E2037 Schottky diode is used as switching device and its small signal model is obtained over the temperature. The design of the phase switch is performed in a 254-m thick alumina substrate, showing an average phase shift of 91.05º±5º over the 26-36 GHz band with an amplitude imbalance of 0.3 dB at room temperature. At cryogenic temperatures, the phase switch shows an average phase shift of 88.5º±9º over the 26-36 GHz band with an amplitude imbalance of around 0.1 dB.es_ES
dc.description.sponsorshipEste trabajo ha sido financiado por el Ministerio de Economía y Competitividad bajo el programa CONSOLIDER-INGENIO 2010 referencia CSD2010-00064es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 2014 URSI Españaes_ES
dc.sourceURSI 2014, XXIX Simposium Nacional de la Unión Científica Internacional de Radio, Valenciaes_ES
dc.titleModelado con la temperatura de diodo Schottky para conmutador de fase 90ºes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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