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    Scaling of structure and electrical properties in ultrathin epitaxial ferroelectric heterostructures

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    Identificadores
    URI: http://hdl.handle.net/10902/4238
    DOI: 10.1063/1.2337363
    ISSN: 0021-8979
    ISSN: 1089-7550
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    Author
    Nagarajan, Valanoor; Junquera Quintana, Francisco JavierAutoridad Unican; He, Jiaqing; Jia, Chunlin; Waser, Rainer M.; Lee, KyoungIl; Kim, Youngkeun; Baik, Sunggi; Zhao, Tong; Ramesh, Ramamoorthy; Ghosez, Philippe; Rabe, Karin M.
    Date
    2006-09
    Derechos
    © 2006 American Institute of Physics.
    Publicado en
    Journal of Applied Physics, vol. 100, iss. 5, art. num. 051609 (2006)
    Publisher
    American Institute of Physics
    Enlace a la publicación
    http://dx.doi.org/10.1063/1.2337363
    Palabras clave
    Polarization
    Ferroelectric thin films
    Thin film
    Piezoelectric fields
    Atomic force microscopy
    Lattice constants
    Ozone
    Electrodes
    Abstract:
    Scaling of the structural order parameter, polarization, and electrical properties was investigated in model ultrathin epitaxial SrRuO3/PbZr0.2Ti0.8O3/SrRuO3/SrTiO3 heterostructures. High-resolution transmission electron microscopy images revealed the interfaces to be sharp and fully coherent. Synchrotron x-ray studies show that a high tetragonality (c/a∼1.058) is maintained down to 50Å thick films, suggesting indirectly that ferroelectricity is fully preserved at such small thicknesses. However, measurement of the switchable polarization (ΔP) using a pulsed probe setup and the out-of-plane piezoelectric response (d33) revealed a systematic drop from ∼140μC/cm2 and 60pm/V for a 150Å thick film to 11μC/cm2 and 7pm/V for a 50Å thick film. This apparent contradiction between the structural measurements and the measured switchable polarization is explained by an increasing presence of a strong depolarization field, which creates a pinned 180° polydomain state for the thinnest films. Existence of a polydomain state is demonstrated by piezoresponse force microscopy images of the ultrathin films. These results suggest that the limit for a ferroelectric memory device may be much larger than the fundamental limit for ferroelectricity.
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    UNIVERSIDAD DE CANTABRIA

    Repositorio realizado por la Biblioteca Universitaria utilizando DSpace software
    Contact Us | Send Feedback
    Metadatos sujetos a:licencia de Creative Commons Reconocimiento 3.0 España