Scaling of structure and electrical properties in ultrathin epitaxial ferroelectric heterostructures
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Identificadores
URI: http://hdl.handle.net/10902/4238DOI: 10.1063/1.2337363
ISSN: 0021-8979
ISSN: 1089-7550
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Nagarajan, Valanoor; Junquera Quintana, Francisco Javier
Date
2006-09Derechos
© 2006 American Institute of Physics.
Publicado en
Journal of Applied Physics, vol. 100, iss. 5, art. num. 051609 (2006)
Publisher
American Institute of Physics
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Palabras clave
Polarization
Ferroelectric thin films
Thin film
Piezoelectric fields
Atomic force microscopy
Lattice constants
Ozone
Electrodes
Abstract:
Scaling of the structural order parameter, polarization, and electrical properties was investigated in model ultrathin epitaxial SrRuO3/PbZr0.2Ti0.8O3/SrRuO3/SrTiO3 heterostructures. High-resolution transmission electron microscopy images revealed the interfaces to be sharp and fully coherent. Synchrotron x-ray studies show that a high tetragonality (c/a∼1.058) is maintained down to 50Å thick films, suggesting indirectly that ferroelectricity is fully preserved at such small thicknesses. However, measurement of the switchable polarization (ΔP) using a pulsed probe setup and the out-of-plane piezoelectric response (d33) revealed a systematic drop from ∼140μC/cm2 and 60pm/V for a 150Å thick film to 11μC/cm2 and 7pm/V for a 50Å thick film. This apparent contradiction between the structural measurements and the measured switchable polarization is explained by an increasing presence of a strong depolarization field, which creates a pinned 180° polydomain state for the thinnest films. Existence of a polydomain state is demonstrated by piezoresponse force microscopy images of the ultrathin films. These results suggest that the limit for a ferroelectric memory device may be much larger than the fundamental limit for ferroelectricity.
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