dc.contributor.author | Geneste, Grégory | |
dc.contributor.author | Bousquet, Eric | |
dc.contributor.author | Junquera Quintana, Francisco Javier | |
dc.contributor.author | Ghosez, Philippe | |
dc.contributor.other | Universidad de Cantabria | es_ES |
dc.date.accessioned | 2014-01-22T09:45:33Z | |
dc.date.available | 2014-01-22T09:45:33Z | |
dc.date.issued | 2006-03 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.issn | 1077-3118 | |
dc.identifier.uri | http://hdl.handle.net/10902/4175 | |
dc.description.abstract | The size dependence of the ferroelectric properties of BaTiO 3 nanowires is studied from first principles. We show that the ferroelectric distortion along the wire axis disappears below a critical diameter of about 1.2nm . This disappearance is related to a global contraction of the unit cell resulting from low atomic coordinations at the wiresurface. It is shown that a ferroelectric distortion can be recovered under appropriate tensile strain conditions. | es_ES |
dc.format.extent | 3 p. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | American Institute of Physics | es_ES |
dc.rights | © 2006 American Institute of Physics | es_ES |
dc.source | Applied Physics Letters, vol. 88, iss. 11, art. num. 112906 (2006) | es_ES |
dc.subject.other | Nanowires | es_ES |
dc.subject.other | Ozone | es_ES |
dc.subject.other | Ferroelectric thin films | es_ES |
dc.subject.other | Lattice constants | es_ES |
dc.subject.other | Ferroelectricity | es_ES |
dc.subject.other | Polarization | es_ES |
dc.subject.other | Ferroelectric devices | es_ES |
dc.subject.other | Surface phase transitions | es_ES |
dc.subject.other | Surface states | es_ES |
dc.subject.other | Thin film structure | es_ES |
dc.title | Finite-size effects in BaTiO3 nanowires | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.relation.publisherVersion | http://dx.doi.org/10.1063/1.2186104 | es_ES |
dc.rights.accessRights | openAccess | es_ES |
dc.identifier.DOI | 10.1063/1.2186104 | |
dc.type.version | publishedVersion | es_ES |