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dc.contributor.authorLomer Barboza, Mauro Matías 
dc.contributor.authorNavarro Meana, César
dc.contributor.authorArce Diego, José Luis 
dc.contributor.authorMediavilla Sánchez, Ángel 
dc.contributor.authorLópez Higuera, José Miguel 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-10-10T06:48:54Z
dc.date.available2013-10-10T06:48:54Z
dc.date.issued1998-09
dc.identifier.urihttp://hdl.handle.net/10902/3665
dc.description.abstractThe illumination characteristic of GaAs MESFET has been measured with single optical fiber is reported. This technique permits an optical control and observer the edge-effect in the MESFET planar. Application in high speed device is proposed.es_ES
dc.format.extent2 p.es_ES
dc.language.isospaes_ES
dc.rights© 1998 URSI Españaes_ES
dc.sourceURSI 1998, XIII Simposium Nacional de la Unión Científica Internacional de Radio, Pamplona, p. 609-610es_ES
dc.titleMESFET GaAs controlado fotónicamentees_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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