Nuevo modelo de gran-señal para transistores MESFET de microondas incluyendo efectos ópticos
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AuthorZamanillo Sainz de la Maza, José María; Navarro Meana, César; Pérez Vega, Constantino; Saiz Ipiña, Juan Antonio; Mediavilla Sánchez, Ángel
This paper is the result of our research on large signal dynamic behavior (Pulsed I/V curves) of GaAs device, in the overall I/V plane, when the incident optical input power is changed. Acomplete bias and optical power dependent large signal model for a MESFET is determined from experimental S-parameters, DC and pulsed measurements. All derivatives of the model shown here are continuous for a realistic description of circuit distortion and intermodulation. The dependencies of circuit elements with optical illumination and the quiescent operating point are evaluated, and a comparison between theoretical and measured results over optical power and bias ranges is shown. Experimental results show a very good agreement with the theoretical analysis.
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