Dependencia de los estados trampa respecto al campo eléctrico en dispositivos MESFET y HEMT

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URI: http://hdl.handle.net/10902/3495
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Author
Rodríguez Téllez, José; Ali, N. T.; Rafael Valdivia, Guillermo; Fernández Ibáñez, TomásAutoridad Unican; Mediavilla Sánchez, ÁngelAutoridad Unican; Tazón Puente, AntonioAutoridad Unican
Date
2002-09
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© 2002 URSI España
Publicado en
URSI 2002, XVII Simposium Nacional de la Unión Científica Internacional de Radio, Alcalá de Henares
Abstract:
A new measurement procedure for observing the dependence of the frequency dispersion effect on electric field for GaAs MESFET/HEMT devices is presented. The new procedure employs a statistically based pulse I/V measurement system for observing the memory effect in these devices. The results indicate, possibly for the first time, the true extent of the effects of the traps in these devices.
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