Dependencia de los estados trampa respecto al campo eléctrico en dispositivos MESFET y HEMT
Author
Rodríguez Téllez, José; Ali, N. T.; Rafael Valdivia, Guillermo; Fernández Ibáñez, Tomás


Date
2002-09Derechos
© 2002 URSI España
Publicado en
URSI 2002, XVII Simposium Nacional de la Unión Científica Internacional de Radio, Alcalá de Henares
Abstract:
A new measurement procedure for observing the
dependence of the frequency dispersion effect on electric field
for GaAs MESFET/HEMT devices is presented. The new
procedure employs a statistically based pulse I/V measurement
system for observing the memory effect in these devices. The
results indicate, possibly for the first time, the true extent of the
effects of the traps in these devices.
Collections to which it belong
- D12 Congresos [545]