Regiones de baja distorsión de intermodulación en dispositivos FET: descripción y aplicaciones

Abstract

In this paper, a complete characterization of the linearity sweet-spot evolution in MESFET/HEMT devices is presented. A global experimental extraction of the Ids(Vgs, Vds) Taylor series coefficients is used to introduce the small-signal behavior in the linear and saturated regions. The possibilities of taking advantage of these points in highly linear applications is also discussed. A description of the influence of both bias voltages on the device transition from small- towards large- signal regime is presented. Finally, a technique for improving the linearity-efficiency tradeoff in a class B/C power amplifier (PA) is introduced.