Show simple item record

dc.contributor.authorPeña Catalina, Roberto
dc.contributor.authorGarcía García, José Ángel 
dc.contributor.authorChaibi, Mohamed
dc.contributor.authorTouhami, Naima Amar
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-09-24T13:26:58Z
dc.date.available2013-09-24T13:26:58Z
dc.date.issued2004-09
dc.identifier.urihttp://hdl.handle.net/10902/3407
dc.description.abstractClass-E power amplifiers have 100% theoretical efficiency, due to switched-mode operation. This concept has traditionally been applied to VHF and UHF frequency ranges. In this paper we propose its application to microwave frequencies, designing and characterizing a class-E power amplifier at 2 GHz based on a HEMT solid state device and microstrip technology.es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 2004 URSI Españaes_ES
dc.sourceURSI 2004, XIX Simposium Nacional de la Unión Científica Internacional de Radio, Barcelonaes_ES
dc.titleDiseño de un amplificador de alta eficiencia clase-E @ 2GHzes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record