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dc.contributor.authorRafael Valdivia, Guillermo
dc.contributor.authorFernández Ibáñez, Tomás 
dc.contributor.authorRodríguez Téllez, José
dc.contributor.authorTazón Puente, Antonio 
dc.contributor.authorMediavilla Sánchez, Ángel 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-09-24T06:22:32Z
dc.date.available2013-09-24T06:22:32Z
dc.date.issued2004-09
dc.identifier.urihttp://hdl.handle.net/10902/3398
dc.description.abstractIn this paper we present a new method to evaluate mobility in HEMT devices. This new approach is based in the measurement of the high order derivatives of the device drain current source as a means of determining the different parameters of the new proposed mobility equation. The presented results will probe the validity of the approach in both linear and saturation regions.es_ES
dc.format.extent3 p.es_ES
dc.language.isospaes_ES
dc.rights© 2004 URSI Españaes_ES
dc.sourceURSI 2004, XIX Simposium Nacional de la Unión Científica Internacional de Radio, Barcelonaes_ES
dc.titleCálculo de la movilidad en dispositivos HEMT a partir de medidas de intermodulaciónes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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