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dc.contributor.authorPando Junquera, Pelayo
dc.contributor.authorGarcía García, José Ángel 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-09-23T12:40:04Z
dc.date.available2013-09-23T12:40:04Z
dc.date.issued2005-09
dc.identifier.urihttp://hdl.handle.net/10902/3369
dc.description.abstractIn this paper, a novel bias control technique is proposed for obtaining a linear response in class C amplifiers based on Dual Gate FET technology. An illustrative DGFET transistor has been characterized in terms of its intermodulation distortion (IMD) behaviour versus input power, paying particular attention to the evolution of the gate-to-source voltage where the sweetspot appears. Using this technique, an amplifier has been designed, being the sweet-spot controlled over an 8 dB input power range, allowing a maximum gain variation of 1 dB. Finally, experimental results of this sweet-spot enhancement are shown, either using the classical twotone excitation or a real QPSK modulated signal.es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 2005 URSI Españaes_ES
dc.sourceURSI 2005, XX Simposium Nacional de la Unión Científica Internacional de Radio, Gandíaes_ES
dc.titleTécnica de mejora de la linealidad para amplificadores en tecnología FET de doble puertaes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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