Modelado electro-óptico de transistores MESFET y P-HEMT en SPICE
Author
Zamanillo Sainz de la Maza, José María

Date
2005-09Derechos
© 2005 URSI España
Publicado en
URSI 2005, XX Simposium Nacional de la Unión Científica Internacional de Radio, Gandía
Abstract:
As an enhancement of our previous works in the
electrical modelling of microwave and optical-microwave
interaction field, this paper shows the result of the
research on large signal behaviour (DC I/V curves) of
AlGaAs P-HEMT (pseudomorphic high electron mobility
transistor) and MESFET devices, in the overall I/V plane,
when the incident optical input power is changed and how
is possible to include the model into the PSPICE simulator.
Experimental results show very good agreement with the
theoretical analysis.
Collections to which it belong
- D12 Congresos [545]