Estudio y mejora de modelos dispersivos avanzados gran señal para la corriente Ids en transistores GaAs MESFET y HEMT
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In this paper a new approach to accurately modeling the second order effects controlling the drain to source current behaviour in GaAs MESFET´s and HEMT’s is going to be presented. Starting from a single-source model, based on the back-gating approach solution, a detailed study of the advantages and limitations of this model has been performed. As a result, a new model has been obtained. This model allows the user to simulate both DC and Large Signal behaviour of the device taking into account all the second order effects (frequency dispersion, self-heating dependence and dispersion due to the bias point) present in such as devices. The accuracy of the obtained results when comparing with experimental results will show the validity of the proposed approach.
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