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dc.contributor.authorZeljami, Kaoutar
dc.contributor.authorGutiérrez Asueta, Jéssica 
dc.contributor.authorPascual Gutiérrez, Juan Pablo 
dc.contributor.authorFernández Ibáñez, Tomás 
dc.contributor.authorTazón Puente, Antonio 
dc.contributor.authorBoussouis, Mohamed
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-09-12T10:48:41Z
dc.date.available2013-09-12T10:48:41Z
dc.date.issued2012-09
dc.identifier.urihttp://hdl.handle.net/10902/3216
dc.description.abstractIn this paper, a comparison between two different techniques: low-frequency (1 MHz) and microwave frequency up to 10 GHz measurements, is presented in order to obtain the apparent capacitance of Single Anode Schottky Diodes fabricated by the University of Virginia. Moreover, W-band S-parameters measurements have been performed and presented in this work. All measurements are done to obtain a complete large signal equivalent circuit model suitable for the device under consideration.es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 2012 URSI Españaes_ES
dc.sourceURSI 2012, XXVII Simposium Nacional de la Unión Científica Internacional de Radio, Elchees_ES
dc.titleCaracterización de diodos Schottky para banda Wes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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