Estudio y caracterización del efecto kink en transistores HEMT de GaN
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AuthorMimouni, Asmae; Fernández Ibáñez, Tomás; Tazón Puente, Antonio; Sánchez Sanz, Fernando; Verdú Herce, Marina; Boussouis, Mohamed
Using as test vehicles virgin and aged GaN HEMT
devices, a study of the kink effect evolution with the applied
electric field and ambient temperature has been performed. The
obtained results lead to a physics explanation of the kink effect
origin as well as its dependence on ambient temperature.
Experimental results, showing the different effects taking place
in the transistor, will be reported for several GaN devices
operating at different electric field and temperature conditions.
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