Distorsión no lineal en un transmisor polar debida a la característica Ron(VDD) del dispositivo GaN HEMT
Author
Marante Torres, Reinel; García García, José Ángel
Date
2009-09Derechos
© 2009 URSI España
Publicado en
URSI 2009, XXIV Simposium Nacional de la Unión Científica Internacional de Radio, Santander
Abstract:
In this paper, the possible impact of RF switching device ON resistance variation with drain supply voltage, Ron(VDD) characteristic, on polar transmitter distortion is considered. Using Pulsed I/V measurement results over a 15 W GaN HEMT, the deviation in the Vdd-to-AM modulation profile is estimated. System-level calculations, in the presence of gateto- drain capacitance contribution to carrier feedthrough, allow the evaluation of the secondary role of this dispersion effect.
Collections to which it belong
- D12 Congresos [545]