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    Estudio y modelado de la fiabilidad en transistores GaN

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    Estudio y modelado.pdf (1.215Mb)
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    URI: http://hdl.handle.net/10902/2660
    ISBN: 978-84-612-6291-5
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    Author
    Arroyo Díez, Judit; Fernández Ibáñez, TomásAutoridad Unican; Sánchez Sanz, Fernando; Verdú Herce, Marina; Tazón Puente, AntonioAutoridad Unican; Mimouni, Asmae
    Date
    2008-09
    Derechos
    © 2008 URSI España
    Publicado en
    URSI 2008, XXIII Simposium Nacional de la Unión Científica Internacional de Radio, Madrid
    Abstract:
    In this paper, reliability prediction models will be proposed, from different measurements obtained in a Life Test using as test vehicle six GaN HEMT’s from wafer AEC1147 provided by III-V Labs. The dependence on stress time of four different magnitudes have been studied (saturated current, gate-source biasing voltage, gate current and transconductance) when monitoring versus time at 175 ºC channel temperature. As a result, mathematical expressions to simulate this dependence have been obtained. The aim of these models is to serve as a tool to circuit designers and manufacturers when studying failure mechanisms.
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    UNIVERSIDAD DE CANTABRIA

    Repositorio realizado por la Biblioteca Universitaria utilizando DSpace software
    Contact Us | Send Feedback
    Metadatos sujetos a:licencia de Creative Commons Reconocimiento 3.0 España