Estudio y modelado de la fiabilidad en transistores GaN
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AuthorArroyo Díez, Judit; Fernández Ibáñez, Tomás; Sánchez Sanz, Fernando; Verdú Herce, Marina; Tazón Puente, Antonio; Mimouni, Asmae
In this paper, reliability prediction models will be proposed, from different measurements obtained in a Life Test using as test vehicle six GaN HEMT’s from wafer AEC1147 provided by III-V Labs. The dependence on stress time of four different magnitudes have been studied (saturated current, gate-source biasing voltage, gate current and transconductance) when monitoring versus time at 175 ºC channel temperature. As a result, mathematical expressions to simulate this dependence have been obtained. The aim of these models is to serve as a tool to circuit designers and manufacturers when studying failure mechanisms.
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