Estudio y modelado de la fiabilidad en transistores GaN
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Arroyo Díez, Judit; Fernández Ibáñez, Tomás

Date
2008-09Derechos
© 2008 URSI España
Publicado en
URSI 2008, XXIII Simposium Nacional de la Unión Científica Internacional de Radio, Madrid
Abstract:
In this paper, reliability prediction models will be proposed, from different measurements obtained in a Life Test using as test vehicle six GaN HEMT’s from wafer AEC1147 provided by III-V Labs. The dependence on stress time of four different magnitudes have been studied (saturated current, gate-source biasing voltage, gate current and transconductance) when monitoring versus time at 175 ºC channel temperature. As a result, mathematical expressions to simulate this dependence have been obtained. The aim of these models is to serve as a tool to circuit designers and manufacturers when studying failure mechanisms.
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- D12 Congresos [545]