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dc.contributor.authorLomer Barboza, Mauro Matías 
dc.contributor.authorRuiz García, Francisco Javier
dc.contributor.authorEchevarría Cuenca, Juan 
dc.contributor.authorArce Diego, José Luis 
dc.contributor.authorMorante Rábago, Miguel Ángel
dc.contributor.authorLópez Higuera, José Miguel 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-06-27T15:01:28Z
dc.date.available2013-06-27T15:01:28Z
dc.date.issued1997-09
dc.identifier.urihttp://hdl.handle.net/10902/2531
dc.description.abstractA detailed description of various equivalent buried-heteroestructure laser circuit models is presented. It is made particular attention to the influence of all the possible parasite elements that they can appear in the model due to the various roads of current in the high frequency behavior of the device, as well as to the parasite elements that appear in the packaged laser. Also they are provided the simulation results thorough the program SPICE of such equivalents circuits proving a good approximation with the real results for this type of semiconductor lasers.es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 1997 URSI Españaes_ES
dc.sourceURSI 1997, XII Simposium Nacional de la Unión Científica Internacional de Radio, Bilbao, v. II, p. 453-456es_ES
dc.titleModelización y simulación de dispositivos optoelectrónicos utilizando el programa SPICEes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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