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dc.contributor.authorGarcía Fernández, Pablo (físico) 
dc.contributor.authorWojdel, Jacketl C.
dc.contributor.authorÍñiguez, Jorge
dc.contributor.authorJunquera Quintana, Francisco Javier 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2018-06-15T11:05:53Z
dc.date.available2018-06-15T11:05:53Z
dc.date.issued2016-05
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.otherFIS2012-37549-C05-04
dc.identifier.otherMAT2013-40581-P
dc.identifier.urihttp://hdl.handle.net/10902/13910
dc.description.abstractWe present a first-principles-based (second-principles) scheme that permits large-scale materials simulations including both atomic and electronic degrees of freedom on the same footing. The method is based on a predictive quantum-mechanical theory - e.g., density functional theory - and its accuracy can be systematically improved at a very modest computational cost. Our approach is based on dividing the electron density of the system into a reference part - typically corresponding to the system's neutral, geometry-dependent ground state - and a deformation part - defined as the difference between the actual and reference densities. We then take advantage of the fact that the bulk part of the system's energy depends on the reference density alone; this part can be efficiently and accurately described by a force field, thus avoiding explicit consideration of the electrons. Then, the effects associated to the difference density can be treated perturbatively with good precision by working in a suitably chosen Wannier function basis. Further, the electronic model can be restricted to the bands of interest. All these features combined yield a very flexible and computationally very efficient scheme. Here we present the basic formulation of this approach, as well as a practical strategy to compute model parameters for realistic materials. We illustrate the accuracy and scope of the proposed method with two case studies, namely, the relative stability of various spin arrangements in NiO (featuring complex magnetic interactions in a strongly-correlated oxide) and the formation of a two-dimensional electron gas at the interface between band insulators LaAlO3 and SrTiO3 (featuring subtle electron-lattice couplings and screening effects). We conclude by discussing ways to overcome the limitations of the present approach (most notably, the assumption of a fixed bonding topology), as well as its many envisioned possibilities and future extensions.es_ES
dc.description.sponsorshipWe thank M. Moreno and J. A. Aramburu for use-ful discussions. P.G.F. and J.J. acknowledge financial sup-port from the Spanish Ministry of Economy and Competitiveness through the MINECO Grant No. FIS2012-37549-C05-04. P.G.F. also acknowledges funding from the Ram ́on y Cajal FellowshipRYC-2013-12515. J.I. is funded by MINECO-Spain Grant MAT2013-40581-P and Fonds National de la Recherche (FNR) Luxembourg Grant FNR/P12/4853155/Kreiseles_ES
dc.format.extent28 p.es_ES
dc.language.isoenges_ES
dc.publisherAmerican Physical Societyes_ES
dc.rights© American Physical Societyes_ES
dc.titleSecond-principles method for materials simulations including electron and lattice degrees of freedomes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publisherVersionhttps://doi.org/10.1103/PhysRevB.93.195137es_ES
dc.rights.accessRightsopenAccesses_ES
dc.identifier.DOI10.1103/PhysRevB.93.195137
dc.type.versionpublishedVersiones_ES


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