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dc.contributor.authorGarcía García, José Ángel 
dc.contributor.authorRuiz Lavín, María de las Nieves 
dc.contributor.authorVegas Bayer, David 
dc.contributor.authorPampín González, María 
dc.contributor.authorMediavilla Sánchez, Ángel 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2018-04-02T13:45:53Z
dc.date.available2018-04-02T13:45:53Z
dc.date.issued2017
dc.identifier.isbn978-1-5090-6071-9
dc.identifier.isbn978-1-5090-6071-9
dc.identifier.isbn978-1-5090-6069-6
dc.identifier.isbn978-1-5090-6070-2
dc.identifier.urihttp://hdl.handle.net/10902/13421
dc.description.abstractThis paper reviews the use of UHF double class-E (class-E2) topologies for dc/dc power conversion. After introducing this attractive resonant converter in the context of the time-reversal duality principle, two different lumped-element networks are described for appropriately terminating the drain of the switching devices. Recent implementation examples, taking advantage of GaN HEMT processes, are then presented. The potential for a fast dynamic response is validated (with a slew rate over 2 V/nS), while also the feasibility for an appropriate operation without requiring external RF gate driving signals. A solution for approximating a load-insensitive operation is finally exposed.es_ES
dc.format.extent4 p.es_ES
dc.language.isoenges_ES
dc.publisherIEEEes_ES
dc.rights© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.es_ES
dc.sourceIEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Miami, Florida, 2017, 80-83es_ES
dc.subject.otherClass-Ees_ES
dc.subject.otherDc/dc conversiones_ES
dc.subject.otherGaN HEMTses_ES
dc.subject.otherMicrowavees_ES
dc.subject.otherResonant Converterses_ES
dc.subject.otherSoft switchinges_ES
dc.subject.otherUHFes_ES
dc.titleUHF power conversion with GaN HEMT class-E2 topologieses_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.relation.publisherVersionhttps://doi.org/10.1109/CSICS.2017.8240439es_ES
dc.rights.accessRightsopenAccesses_ES
dc.identifier.DOI10.1109/CSICS.2017.8240439
dc.type.versionacceptedVersiones_ES


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