UHF power conversion with GaN HEMT class-E2 topologies
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AuthorGarcía García, José Ángel; Ruiz Lavín, María de las Nieves; Vegas Bayer, David; Pampín González, María; Mediavilla Sánchez, Ángel
This paper reviews the use of UHF double class-E (class-E2) topologies for dc/dc power conversion. After introducing this attractive resonant converter in the context of the time-reversal duality principle, two different lumped-element networks are described for appropriately terminating the drain of the switching devices. Recent implementation examples, taking advantage of GaN HEMT processes, are then presented. The potential for a fast dynamic response is validated (with a slew rate over 2 V/nS), while also the feasibility for an appropriate operation without requiring external RF gate driving signals. A solution for approximating a load-insensitive operation is finally exposed.
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