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dc.contributor.authorPérez Cisneros, José Ramón
dc.contributor.authorGarcía García, José Ángel 
dc.contributor.authorRuiz Lavín, María de las Nieves 
dc.contributor.authorMingo Sanz, Jesús de
dc.contributor.authorPampín González, María 
dc.contributor.authorVegas Bayer, David 
dc.contributor.authorCarro Ceballos, Pedro Luis
dc.contributor.authorGarcía Dúcar, María Paloma
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2017-06-01T12:59:56Z
dc.date.available2017-06-01T12:59:56Z
dc.date.issued2016
dc.identifier.isbn978-84-608-9674-6
dc.identifier.otherTEC2014-58341-C4-1-Res_ES
dc.identifier.otherTEC2014-58341-C4-2-Res_ES
dc.identifier.urihttp://hdl.handle.net/10902/11132
dc.description.abstractThis work presents a methodology to design highefficient dual-band RF power amplifiers. Using the non-linear model of the selected GaN HEMT device, an analysis of the performance of the transistor to changes in the phases of both the second and the third harmonic has been carried out for both frequencies. Based on this analysis, drain terminating and biasing networks are designed to provide near optima impedance values at the fundamental and higher order harmonics to the selected frequency bands. The experimental characterization of the implemented prototype, which operates at 1.8 GHz and 2.6 GHz, can achieve drain efficiencies around 70 % with output power levels greater than 42 dBm in both frequency bands. Furthermore, PAEs obtained are very close to drain efficiencies after dual-band input matching.es_ES
dc.description.sponsorshipEste trabajo ha sido financiado por el Gobierno de Espana bajo los proyectos TEC2014-58341-C4-1-R y TEC2014-58341-C4-2-R del MINECO, por el FEDER, por el FSE, a través de la beca FPI del MINECO del primer autor (BES-2012-061813). Además, el primer autor agradece la beca de movilidad predoctoral del MINECO (EEBB-I-15-10447)es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 Españaes_ES
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.sourceURSI 2016, XXXI Simposium Nacional de la Unión Científica Internacional de Radio, Madrides_ES
dc.titleAmplificador de potencia doble-banda (1.8 GHz y 2.6 GHz) con alta eficienciaes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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Atribución-NoComercial-SinDerivadas 3.0 EspañaExcept where otherwise noted, this item's license is described as Atribución-NoComercial-SinDerivadas 3.0 España