Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit
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AuthorVan Raay, Friedbert; Quay, Rüdiger; Aja Abelán, Beatriz; Moschetti, Giuseppe; Seelmann-Eggebert, Matthias; Schlechtweg, Michael; Ambacher, Oliver
Modern communication and radar systems show an increasing demand for robust ultra-broadband amplifiers for low-noise applications. A set of three different 0.5 GHz to 20 GHz MMIC LNAs using a GaN HEMT technology with a gate length of 0.25 μm was designed and fabricated, each with a noise figure between 3 dB and 7 dB over frequency. Two designs with four and five FET cells feature approx. 10 dB and 11 dB broadband gain, while a third MMIC with a chain connection of both figures more than 20 dB of gain. A distributed active drain bias circuit substitutes large area or off-chip inductor structures and enables a full-MMIC chain connection of both TWA stages.
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