dc.contributor.author | Moschetti, Giuseppe | |
dc.contributor.author | Leuther, Arnulf | |
dc.contributor.author | Maßler, Herman | |
dc.contributor.author | Aja Abelán, Beatriz | |
dc.contributor.author | Rösch, Markus | |
dc.contributor.author | Schlechtweg, Michael | |
dc.contributor.author | Ambacher, Oliver | |
dc.contributor.author | Kangas, Ville | |
dc.contributor.author | Perichaud, Marie Geneviève | |
dc.contributor.other | Universidad de Cantabria | es_ES |
dc.date.accessioned | 2017-01-13T13:47:00Z | |
dc.date.available | 2017-01-13T13:47:00Z | |
dc.date.issued | 2015-09 | |
dc.identifier.issn | 1531-1309 | |
dc.identifier.issn | 1558-1764 | |
dc.identifier.uri | http://hdl.handle.net/10902/9999 | |
dc.description.abstract | This paper presents a 183 GHz low-noise amplifier (LNA), designed primarly for water vapor detection in atmosphere. The LNA requirements were defined by MetOp Second Generation (MetOp-SG) Microwave Sounder, Microwave Imager and Ice Cloud Imager instruments. MetOp-SG is the European contribution to operational meteorological observations from polar orbit. This LNA advances the current state-of-the-art for the InGaAs metamorphic high electron
mobility transistor (mHEMT) technology. The five-stage common-source MMIC amplifier utilizes transistors with a gate length of 50 nm. On-wafer measurements show a noise figure of 3.5 dB at the operative frequency, about 1 dB lower than previously reported mHEMT LNAs, and a gain of 24±2 dB over the bandwidth 160-200 GHz. The input and output matching are -11 dB and -10 dB, respectively. Moreover, the DC power dissipation at the optimal bias for noise is as low as 24 mW. | es_ES |
dc.format.extent | 3 p. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | es_ES |
dc.rights | © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | es_ES |
dc.source | IEEE Microwave and Wireless Components Letters, 2015, 25(9), 618-620 | es_ES |
dc.subject.other | G-band | es_ES |
dc.subject.other | Low-noise amplifiers (LNAs) | es_ES |
dc.subject.other | Metamorphic high electron mobility transistor (mHEMT) | es_ES |
dc.subject.other | Monolithic microwave integrated circuit (MMIC) | es_ES |
dc.title | A 183 GHz metamorphic HEMT low-noise amplifier with 3.5 dB noise figure | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.relation.publisherVersion | https://doi.org/10.1109/LMWC.2015.2451355 | es_ES |
dc.rights.accessRights | openAccess | es_ES |
dc.identifier.DOI | 10.1109/LMWC.2015.2451355 | |
dc.type.version | acceptedVersion | es_ES |