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dc.contributor.authorMoschetti, Giuseppe
dc.contributor.authorLeuther, Arnulf
dc.contributor.authorMaßler, Herman
dc.contributor.authorAja Abelán, Beatriz 
dc.contributor.authorRösch, Markus
dc.contributor.authorSchlechtweg, Michael
dc.contributor.authorAmbacher, Oliver
dc.contributor.authorKangas, Ville
dc.contributor.authorPerichaud, Marie Geneviève
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2017-01-13T13:47:00Z
dc.date.available2017-01-13T13:47:00Z
dc.date.issued2015-09
dc.identifier.issn1531-1309
dc.identifier.issn1558-1764
dc.identifier.urihttp://hdl.handle.net/10902/9999
dc.description.abstractThis paper presents a 183 GHz low-noise amplifier (LNA), designed primarly for water vapor detection in atmosphere. The LNA requirements were defined by MetOp Second Generation (MetOp-SG) Microwave Sounder, Microwave Imager and Ice Cloud Imager instruments. MetOp-SG is the European contribution to operational meteorological observations from polar orbit. This LNA advances the current state-of-the-art for the InGaAs metamorphic high electron mobility transistor (mHEMT) technology. The five-stage common-source MMIC amplifier utilizes transistors with a gate length of 50 nm. On-wafer measurements show a noise figure of 3.5 dB at the operative frequency, about 1 dB lower than previously reported mHEMT LNAs, and a gain of 24±2 dB over the bandwidth 160-200 GHz. The input and output matching are -11 dB and -10 dB, respectively. Moreover, the DC power dissipation at the optimal bias for noise is as low as 24 mW.es_ES
dc.format.extent3 p.es_ES
dc.language.isoenges_ES
dc.publisherInstitute of Electrical and Electronics Engineers Inc.es_ES
dc.rights© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.es_ES
dc.sourceIEEE Microwave and Wireless Components Letters, 2015, 25(9), 618-620es_ES
dc.subject.otherG-bandes_ES
dc.subject.otherLow-noise amplifiers (LNAs)es_ES
dc.subject.otherMetamorphic high electron mobility transistor (mHEMT)es_ES
dc.subject.otherMonolithic microwave integrated circuit (MMIC)es_ES
dc.titleA 183 GHz metamorphic HEMT low-noise amplifier with 3.5 dB noise figurees_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publisherVersionhttps://doi.org/10.1109/LMWC.2015.2451355es_ES
dc.rights.accessRightsopenAccesses_ES
dc.identifier.DOI10.1109/LMWC.2015.2451355
dc.type.versionacceptedVersiones_ES


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