In this paper, the design of efficient transmitting architectures is addressed. Taking advantage of the modeling and characterization of novel active devices as GaN HEMT and E-pHEMT, several topologies have been approached. An outphasing transmitter at 770 MHz have been implemented from two class-E RFPA designed over package GaN HEMTs. In addition, for multiband applications, a dual band outphasing transmitter (able of operating either at 770 MHz or 960 MHz) has been also realized. A Chireix reactive combiner allows positioning the drain impedance loci to produce high efficiency and good dynamic range profiles, for both designs. Average drain efficiency figure over 61% has been measured for a 8.4 dB PAPR WCDMA signal, in the dual-band implementation. Besides, in the first approach, an efficient value of 57.5% was estimated when reproducing a LTE with a PAPR of 9.6 dB. On the other hand, wireless powering applications have been into account in the design of self-biased and self-synchronous class-E rectifier, based on an E-pHEMT. Two implementations at 900 MHz and 2.45 GHz, with efficient values of 76% and 64% at power levels of -4 dBm and -1 dBm, respectively, and peak figures of 88% and 77%, have been measured.
