Ka-band full-hybrid cryogenic low- noise amplifier

Abstract

This paper describes the design and implementation of a broad-band full-hybrid cryogenic lownoise amplifier (MIC LNA) in the 26 – 36 frequency band, aimed for the front-end module in radio-astronomy receivers. A metamorphic technology process (mHEMT) of 50 nm gate length is used to manufacture the transistor. Design is based on a three stage common source transistor configuration and surface mounted devices (SMD) with high quality factors. Therefore, gain and noise performance are improved compared with monolithic technology (MMIC). At room temperature the mean measured gain is G = 22.4 dB and the noise temperature is Tn = 175 K. When cooled to Tp = 13 K, insertion gain is Gi = 23.8 dB and the noise temperature is Tn = 26 K. The DC power consumption is extremely low, PDC = 5.7 mW at cryogenic temperatures.