Ka-band full-hybrid cryogenic low- noise amplifier
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Terán Collantes, José Vicente



Fecha
2014-09Derechos
© 2014 URSI España
Publicado en
URSI 2014, XXIX Simposium Nacional de la Unión Científica Internacional de Radio, Valencia
Resumen/Abstract
This paper describes the design and implementation of a broad-band full-hybrid cryogenic lownoise amplifier (MIC LNA) in the 26 – 36 frequency band, aimed for the front-end module in radio-astronomy receivers. A metamorphic technology process (mHEMT) of 50 nm gate length is used to manufacture the transistor. Design is based on a three stage common source transistor configuration and surface mounted devices (SMD) with high quality factors. Therefore, gain and noise performance are improved compared with monolithic technology (MMIC). At room temperature the mean measured gain is G = 22.4 dB and the noise temperature is Tn = 175 K. When cooled to Tp = 13 K, insertion gain is Gi = 23.8 dB and the noise temperature is Tn = 26 K. The DC power consumption is extremely low, PDC = 5.7 mW at cryogenic temperatures.
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