Modelado con la temperatura de diodo Schottky para conmutador de fase 90º

Abstract

This work describes the modelling of a Schottky diode at room (300 K) and cryogenic (15 K) temperatures for its use in a 90º phase switch working in the Ka-band. The phase switch is based on the combination of filters as phase shifting branches and a single-pole double-throw (SPDT) switch with Schottky diodes as switching devices. The MA4E2037 Schottky diode is used as switching device and its small signal model is obtained over the temperature. The design of the phase switch is performed in a 254-m thick alumina substrate, showing an average phase shift of 91.05º±5º over the 26-36 GHz band with an amplitude imbalance of 0.3 dB at room temperature. At cryogenic temperatures, the phase switch shows an average phase shift of 88.5º±9º over the 26-36 GHz band with an amplitude imbalance of around 0.1 dB.