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dc.contributor.authorNagarajan, Valanoor
dc.contributor.authorJunquera Quintana, Francisco Javier 
dc.contributor.authorHe, Jiaqing
dc.contributor.authorJia, Chunlin
dc.contributor.authorWaser, Rainer M.
dc.contributor.authorLee, KyoungIl
dc.contributor.authorKim, Youngkeun
dc.contributor.authorBaik, Sunggi
dc.contributor.authorZhao, Tong
dc.contributor.authorRamesh, Ramamoorthy
dc.contributor.authorGhosez, Philippe
dc.contributor.authorRabe, Karin M.
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2014-02-03T13:48:13Z
dc.date.available2014-02-03T13:48:13Z
dc.date.issued2006-09
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.urihttp://hdl.handle.net/10902/4238
dc.description.abstractScaling of the structural order parameter, polarization, and electrical properties was investigated in model ultrathin epitaxial SrRuO3/PbZr0.2Ti0.8O3/SrRuO3/SrTiO3 heterostructures. High-resolution transmission electron microscopy images revealed the interfaces to be sharp and fully coherent. Synchrotron x-ray studies show that a high tetragonality (c/a∼1.058) is maintained down to 50Å thick films, suggesting indirectly that ferroelectricity is fully preserved at such small thicknesses. However, measurement of the switchable polarization (ΔP) using a pulsed probe setup and the out-of-plane piezoelectric response (d33) revealed a systematic drop from ∼140μC/cm2 and 60pm/V for a 150Å thick film to 11μC/cm2 and 7pm/V for a 50Å thick film. This apparent contradiction between the structural measurements and the measured switchable polarization is explained by an increasing presence of a strong depolarization field, which creates a pinned 180° polydomain state for the thinnest films. Existence of a polydomain state is demonstrated by piezoresponse force microscopy images of the ultrathin films. These results suggest that the limit for a ferroelectric memory device may be much larger than the fundamental limit for ferroelectricity.es_ES
dc.format.extent10 p.es_ES
dc.language.isoenges_ES
dc.publisherAmerican Institute of Physicses_ES
dc.rights© 2006 American Institute of Physics.es_ES
dc.sourceJournal of Applied Physics, vol. 100, iss. 5, art. num. 051609 (2006)es_ES
dc.subject.otherPolarizationes_ES
dc.subject.otherFerroelectric thin filmses_ES
dc.subject.otherThin filmes_ES
dc.subject.otherPiezoelectric fieldses_ES
dc.subject.otherAtomic force microscopyes_ES
dc.subject.otherLattice constantses_ES
dc.subject.otherOzonees_ES
dc.subject.otherElectrodeses_ES
dc.titleScaling of structure and electrical properties in ultrathin epitaxial ferroelectric heterostructureses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publisherVersionhttp://dx.doi.org/10.1063/1.2337363es_ES
dc.rights.accessRightsopenAccesses_ES
dc.identifier.DOI10.1063/1.2337363
dc.type.versionpublishedVersiones_ES


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