Robust ku-band low-noise amplifier in GaN HEMT technology

Abstract

This paper presents a Ku-band low-noise amplifier (LNA) based on 150-nm GaN-on-SiC technology. The 4 -stage monolithic microwave 2integrated circuit (MMIC) LNA is 3×1.5mm2 in area and it is waveguide packaged. On-wafer measurements show a small-signal gain of 35 dB and noise figure of 1.42 dB over the 13.25 to 13.75 GHz, with an average value below 1.57 dB within the whole Ku-band. Packaged characterization yields a minimum of 1.47 dB with 32.3 dB associated gain at 13.5 GHz for a 720 mW power consumption. Performed large-signal measurements demonstrate an output 1dB compression point of 12.9 dBm. The LNA is stressed with a RF CW stepped input power up to 31 dBm, for 5 min, with no significant S-parameters and noise figure degradation. The robustness and noise performance of this amplifier make it a very competitive solution for its feasible integration in the next generation satellite communication systems.