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dc.contributor.authorJato Llano, Yolanda 
dc.contributor.authorHerrera Guardado, Amparo 
dc.contributor.authorPérez Martínez, Carmen 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-10-25T15:36:23Z
dc.date.available2013-10-25T15:36:23Z
dc.date.issued2013-09
dc.identifier.urihttp://hdl.handle.net/10902/3773
dc.description.abstractA low noise amplifier (LNA) for Ultra-wideband (UWB) applications is presented in this article. A cascode configuration with emitter degeneration has been used in the input stage to obtain wide bandwidth, low noise and good input matching at the same time. The effect of the transmission lines that interconnects the components has been simulated. The LNA covers the frequency band from 6 to 9 GHz with a maximum gain of 15 dB. The noise figure of the LNA is below 5.4 dB in the whole band. The LNA consumes 10.6 mA from two supply voltages of 2 V and 0.84 V. The amplifier was fabricated in a 0.18 μm CMOS process from UMS and occupies a chip area of 2 x 1 mm including pads.es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 2013 URSI Españaes_ES
dc.sourceURSI 2013, XXVIII Simposium Nacional de la Unión Científica Internacional de Radio, Santiago de Compostelaes_ES
dc.titleLNA de banda ultra-ancha para aplicación en radar de penetración de superficieses_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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