LNA de banda ultra-ancha para aplicación en radar de penetración de superficies

Abstract

A low noise amplifier (LNA) for Ultra-wideband (UWB) applications is presented in this article. A cascode configuration with emitter degeneration has been used in the input stage to obtain wide bandwidth, low noise and good input matching at the same time. The effect of the transmission lines that interconnects the components has been simulated. The LNA covers the frequency band from 6 to 9 GHz with a maximum gain of 15 dB. The noise figure of the LNA is below 5.4 dB in the whole band. The LNA consumes 10.6 mA from two supply voltages of 2 V and 0.84 V. The amplifier was fabricated in a 0.18 μm CMOS process from UMS and occupies a chip area of 2 x 1 mm including pads.