Propiedades dinámicas gran-señal de un transistor MESFET de GaAs bajo iluminación óptica

Abstract

This paper is the result of an extensive investigation on the large signal dynamic behaviour (Pulsed I/V) of unipolar GaAs device, in the overall i/V plane, when varying the incident optical power. We have observed a hyperbolic dependence with the gate voltage along with a quasi-logarithmic dependence in front of the optical power.