Nueva técnica de caracterización para la identificación por separado de la dispersión frecuencial y los efectos de autocalentamiento en GaAs MESFET

Abstract

Static, pulsed and liquid crystal measurements for a 900µm gate-width GaAs MESFET indicate clearly that the device has a much slower thermal response time than was previously thought. The data show that the differences observed between the static and pulsed IV characteristics of the device are due to frequency dispersion and not to thermal effects, as is sometimes assumed.