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dc.contributor.authorTouhami, Naima Amar
dc.contributor.authorGarcía García, José Ángel 
dc.contributor.authorBedia Expósito, Beatriz
dc.contributor.authorCabral, Pedro Miguel
dc.contributor.authorPedro, José Carlos
dc.contributor.authorBoussouis, Mohamed
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2025-04-04T08:12:07Z
dc.date.available2025-04-04T08:12:07Z
dc.date.issued2008-07
dc.identifier.issn1553-0396
dc.identifier.otherTEC2005-07985-C03-01es_ES
dc.identifier.urihttps://hdl.handle.net/10902/36193
dc.description.abstractIn this paper, an experimental procedure is proposed for accurately characterizing the Vdd-to-AM and Vdd-to-PM nonlinearities in a class E power amplifier (PA). Based on GaN HEMT technology, this transmission line switching PA is aimed to be used as modulating stage of a 900 MHz polar transmitter. Measured results under a two-tone excitation support the need for predistorting functions.es_ES
dc.description.sponsorshipThis work was supported by the European Commission and the Spanish Ministry of Science and Education through TARGET NoE and project TEC2005-07985-C03-01. The authors want to thank Ryan Baker, Cree, Inc., by his kind support with the GaN HEMT nonlinear model.es_ES
dc.format.extent6 p.es_ES
dc.language.isoenges_ES
dc.publisherElectrical Engineering Department, University of Nevadaes_ES
dc.rights© International Journal of Microwave and Optical Technology (IJMOT)es_ES
dc.sourceInternational Journal of Microwave and Optical Technology, 2008, 3(3), 202-207es_ES
dc.subject.otherEfficiencyes_ES
dc.subject.otherNonlinear distortiones_ES
dc.subject.otherPolar transmitterses_ES
dc.subject.otherPower amplifierses_ES
dc.titleAccurately characterizing the Vdd-to-AM and Vdd-to-PM nonlinearities in a GaN HEMT class E power amplifieres_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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