Accurately characterizing the Vdd-to-AM and Vdd-to-PM nonlinearities in a GaN HEMT class E power amplifier

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Identificadores
URI: https://hdl.handle.net/10902/36193
ISSN: 1553-0396
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Autoría
Touhami, Naima Amar; García García, José ÁngelAutoridad Unican; Bedia Expósito, Beatriz; Cabral, Pedro Miguel; Pedro, José Carlos; Boussouis, Mohamed
Fecha
2008-07
Derechos
© International Journal of Microwave and Optical Technology (IJMOT)
Publicado en
International Journal of Microwave and Optical Technology, 2008, 3(3), 202-207
Editorial
Electrical Engineering Department, University of Nevada
Palabras clave
Efficiency
Nonlinear distortion
Polar transmitters
Power amplifiers
Resumen/Abstract
In this paper, an experimental procedure is proposed for accurately characterizing the Vdd-to-AM and Vdd-to-PM nonlinearities in a class E power amplifier (PA). Based on GaN HEMT technology, this transmission line switching PA is aimed to be used as modulating stage of a 900 MHz polar transmitter. Measured results under a two-tone excitation support the need for predistorting functions.
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