Modelo no lineal banda ancha para transistores HBT de SiGe

Abstract

A new non linear model for SiGe HBTs, obtained with extraction techniques from DC and RF measurements is presented. These equivalent circuit based model is able to characterize the device from low frequencies (100 Mhz) up to the millimeter band (40 GHz). Devices modeled have different dimensions of base and emitter contacts. The HBT devices have been fabricated by Daimler Chrysler Research Centre in Ulm (Germany). Experimental non linear test show good agreement with simulated values.