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dc.contributor.authorAja Abelán, Beatriz 
dc.contributor.authorFuente Rodríguez, Luisa María de la 
dc.contributor.authorGarcía García, José Ángel 
dc.contributor.authorPascual Gutiérrez, Juan Pablo 
dc.contributor.authorArtal Latorre, Eduardo 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-10-07T12:47:29Z
dc.date.available2013-10-07T12:47:29Z
dc.date.issued2000-09
dc.identifier.urihttp://hdl.handle.net/10902/3579
dc.description.abstractThis paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion loss and IMD performance. Transistor two-sided harmonic measurements across Vds and Vgs revealed the presence of IMD sweet spots that were used to optimize the conversion loss and IMD behavior of the mixer. Minimum conversion loss of 10 dB was measured in the 40.8-49 GHz RF frequency band, showing a reasonable agreement with simulation results. Mixer single-tone IMD was measured and simulated. The minimum output level at 3fIF was less than -102 dBm for an RF input level of -10 dBm and for a bias point near the predicted sweet spot.es_ES
dc.format.extent2 p.es_ES
dc.language.isospaes_ES
dc.rights© 2000 URSI Españaes_ES
dc.sourceURSI 2000, XV Simposium Nacional de la Unión Científica Internacional de Radio, Zaragozaes_ES
dc.titleMezclador monolítico resistivo a HEMT en la banda Q para aplicaciones MVDSes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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