dc.contributor.author | González Gutiérrez, Pedro J. | |
dc.contributor.author | Herrán Ontañón, Luis Fernando | |
dc.contributor.author | García García, José Ángel | |
dc.contributor.author | Fernández Ibáñez, Tomás | |
dc.contributor.other | Universidad de Cantabria | es_ES |
dc.date.accessioned | 2013-10-04T07:32:17Z | |
dc.date.available | 2013-10-04T07:32:17Z | |
dc.date.issued | 2000-09 | |
dc.identifier.uri | http://hdl.handle.net/10902/3557 | |
dc.description.abstract | The existence of small-signal intermodulation distortion (IMD) "sweet spots" in RF Power LDMOS devices is accurately predicted through a not previously reported complete characterization of its Ids(Vgs, Vds) Taylor-series coefficients. A simplified description of transconductance´s derivatives shows to be inaccurate for this kind of devices. | es_ES |
dc.format.extent | 2 p. | es_ES |
dc.language.iso | spa | es_ES |
dc.rights | © 2000 URSI España | es_ES |
dc.source | URSI 2000, XV Simposium Nacional de la Unión Científica Internacional de Radio, Zaragoza | es_ES |
dc.title | Caracterización en distorsión de intermodulación pequeña señal de dispositivos LDMOS de potencia | es_ES |
dc.type | info:eu-repo/semantics/conferenceObject | es_ES |
dc.rights.accessRights | openAccess | es_ES |
dc.type.version | publishedVersion | es_ES |