Caracterización en distorsión de intermodulación pequeña señal de dispositivos LDMOS de potencia

Abstract

The existence of small-signal intermodulation distortion (IMD) "sweet spots" in RF Power LDMOS devices is accurately predicted through a not previously reported complete characterization of its Ids(Vgs, Vds) Taylor-series coefficients. A simplified description of transconductance´s derivatives shows to be inaccurate for this kind of devices.