Nuevo modelo de capacidad de puerta para transistores MESFET de microondas incluyendo efectos ópticos

Abstract

A new set of pseudo-empirical equations are presented in order to simulate the optical and bias dependencies of GaAs MESFET junction capacitances, which is valid for the whole I-V plane. The variations induced in the small signal equivalent circuit by the optical illumination are extracted from on-wafer scattering parameter measurements. New linear and quasi-logarithmic variations versus the incident optical power are shown for gate-to-drain and gate-to-source (Cgd and Cgs) capacitances. Furthermore, experimental results are in very good agreement with the simulated values for a wide range of optical power and bias conditions.