Nuevo modelo de gran-señal para transistores MESFET de microondas incluyendo efectos ópticos

Abstract

This paper is the result of our research on large signal dynamic behavior (Pulsed I/V curves) of GaAs device, in the overall I/V plane, when the incident optical input power is changed. Acomplete bias and optical power dependent large signal model for a MESFET is determined from experimental S-parameters, DC and pulsed measurements. All derivatives of the model shown here are continuous for a realistic description of circuit distortion and intermodulation. The dependencies of circuit elements with optical illumination and the quiescent operating point are evaluated, and a comparison between theoretical and measured results over optical power and bias ranges is shown. Experimental results show a very good agreement with the theoretical analysis.