dc.contributor.author | Moreno Sierra, César | es_ES |
dc.contributor.author | Pfattner, Raphael | es_ES |
dc.contributor.author | Mas-Torrent, Marta | es_ES |
dc.contributor.author | Puigdollers, Joaquim | es_ES |
dc.contributor.author | Bromley, Stefan T. | es_ES |
dc.contributor.author | Rovira, Concepció | es_ES |
dc.contributor.author | Veciana, Jaume | es_ES |
dc.contributor.author | Alcubilla, Ramón | es_ES |
dc.contributor.other | Universidad de Cantabria | es_ES |
dc.date.accessioned | 2025-02-03T11:20:29Z | |
dc.date.available | 2025-02-03T11:20:29Z | |
dc.date.issued | 2012-01 | es_ES |
dc.identifier.issn | 0959-9428 | es_ES |
dc.identifier.issn | 1364-5501 | es_ES |
dc.identifier.other | TEC 2008-02520 | es_ES |
dc.identifier.other | CSD2007-00007 ; CTQ2006-06333 ; CTQ2010-19501 | es_ES |
dc.identifier.uri | https://hdl.handle.net/10902/35306 | |
dc.description.abstract | Theoretical and experimental investigations combining in situKelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) single crystal organic field-effect transistors. Our work demonstrates that ambipolar behavior is not restricted only to materials possessing a high electron affinity and thus may be a more general phenomenon. | es_ES |
dc.format.extent | 4 p. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | Royal Society of Chemistry | es_ES |
dc.rights | Alojado según Resolución CNEAI 9/12/24 (ANECA). This journal is © The Royal Society of Chemistry 2012 | es_ES |
dc.source | Journal of Materials Chemistry, 2012, 22(2), 345-348 | es_ES |
dc.title | Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.relation.publisherVersion | https://doi.org/10.1039/C1JM15037E | es_ES |
dc.rights.accessRights | closedAccess | |
dc.identifier.DOI | 10.1039/c1jm15037e | es_ES |
dc.type.version | publishedVersion | es_ES |