Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor

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URI: https://hdl.handle.net/10902/35306
ISSN: 0959-9428
ISSN: 1364-5501
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Autoría
Moreno Sierra, CésarAutoridad Unican; Pfattner, Raphael; Mas-Torrent, Marta; Puigdollers, Joaquim; Bromley, Stefan T.; Rovira, Concepció; Veciana, Jaume; Alcubilla, Ramón
Fecha
2012-01
Derechos
Alojado según Resolución CNEAI 9/12/24 (ANECA). This journal is © The Royal Society of Chemistry 2012
Publicado en
Journal of Materials Chemistry, 2012, 22(2), 345-348
Editorial
Royal Society of Chemistry
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Resumen/Abstract
Theoretical and experimental investigations combining in situKelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) single crystal organic field-effect transistors. Our work demonstrates that ambipolar behavior is not restricted only to materials possessing a high electron affinity and thus may be a more general phenomenon.
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