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dc.contributor.authorDenis-le Coarer, Florian
dc.contributor.authorQuirce Teja, Ana 
dc.contributor.authorPérez García, Pablo
dc.contributor.authorValle Gutiérrez, Ángel 
dc.contributor.authorPesquera Gonzalez, Luis
dc.contributor.authorSciamanna, Marc
dc.contributor.authorThienpont, Hugo
dc.contributor.authorPanajotov, Krassimir
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2025-01-20T13:49:05Z
dc.date.available2025-01-20T13:49:05Z
dc.date.issued2017-11
dc.identifier.issn1077-260X
dc.identifier.issn1558-4542
dc.identifier.otherTEC2015-65212-C3-1-Pes_ES
dc.identifier.urihttps://hdl.handle.net/10902/35071
dc.description.abstractWe present experimental and theoretical results of bistable polarization switching in a single transverse mode 1550 nm vertical-cavity surface-emitting laser (VCSEL) subject to parallel optical injection. We focus our analysis on the bistability induced by power variation of the master laser found on the recently observed state of simultaneous injection locking of the parallel polarization mode and excitation of the orthogonal polarization mode, IL+PS. Experimental stability maps identifying, in the injected power-frequency detuning plane, where this state is observed, and corresponding bistable regions are reported for several bias currents. We find bistability between the IL+PS state and the single polarization mode injection locked solution. We also find bistability between the IL+PS and different periodic dynamics in the parallel polarization mode. The width of the hysteresis cycle increases when increasing the bias current or when increasing the wavelength of the optical injection beyond the solitary VCSEL wavelength. We theoretically confirm these types of bistability by numerically simulating the spin-flip model and by performing a linear stability analysis for the different stable states. Excellent agreement is found between experimental and theoretical results.es_ES
dc.description.sponsorshipThis work was funded by the Ministerio de Economía y Competitividad (MINECO/FEDER, UE), Spain under project TEC2015-65212-C3-1-P. The work of F. Denis-le Coarer and M. Sciamanna was supported by the Prefecture de Rgion Grand-Est through the projects FEDER (PHOTON, APOLLO) and FNADT (APOLLO, PIANO) and by AIRBUS-GDI Simulation, Metz Metropole, Conseil Départemental de Moselle, Conseil Regional Grand-Est, Préfecture de Région Grand-Est through the funding of the Chair in Photonics. The work of A. Quirce was supported by the Fonds Wetenschappelijk for the Post-Doctoral Fellowship. The work of H. Thienpont and K. Panajotov was supported by the Methusalem foundation.es_ES
dc.format.extent10 p.es_ES
dc.language.isoenges_ES
dc.publisherInstitute of Electrical and Electronics Engineers Inc.es_ES
dc.rights© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.es_ES
dc.sourceIEEE Journal of Selected Topics in Quantum Electronics, 2017, 23(6), 1800910es_ES
dc.subject.otherSemiconductor laserses_ES
dc.subject.otherVertical-Cavity Surfacees_ES
dc.subject.otherEmitting Laserses_ES
dc.subject.otherInjection-locked laserses_ES
dc.subject.otherBistabilityes_ES
dc.titleInjection locking and polarization switching bistability in a 1550nm-VCSEL subject to parallel optical injectiones_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publisherVersionhttps://doi.org/10.1109/JSTQE.2017.2690840es_ES
dc.rights.accessRightsopenAccesses_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO//TEC2015-65212-C3-1-P/ES/PEINES DE FRECUENCIA GENERADOS POR LASERES DE SEMICONDUCTOR/es_ES
dc.identifier.DOI10.1109/JSTQE.2017.2690840
dc.type.versionacceptedVersiones_ES


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