Modelización de dispositivos de SiGe (HBTs) para un amplificador monoetapa

Abstract

An approach to heterojunction bipolar transistors (HBT’s) characterization and modeling is presented whit a compact HBT nonlinear circuit model which accounts for the temperature dependence effects. The parameters are extracted from DC and S-parameters measurements. The power characteristics of the device are then predicted using the extracted model without any further optimizations. The model has been implemented in MDS –HP nonlinear simulator. Good fitting is obtained in DC and scattering curves up to 40 GHz. An amplifier designed with the HBT67 transistors is presented. Simulations show good agreement with measurements.