| dc.contributor.author | García García, José Ángel | |
| dc.contributor.author | Malaver, Emigdio | |
| dc.contributor.author | Cabria de Juan, Lorena | |
| dc.contributor.other | Universidad de Cantabria | es_ES |
| dc.date.accessioned | 2013-10-02T07:29:54Z | |
| dc.date.available | 2013-10-02T07:29:54Z | |
| dc.date.issued | 2002-09 | |
| dc.identifier.uri | http://hdl.handle.net/10902/3501 | |
| dc.description.abstract | Important efforts are currently being made on linear
amplification, and novel techniques are being developed,
based on the transistor characteristics. This paper proposes
the use of the large-signal behavior of the in-band
intermodulation distortion (IMD) components in FET devices
for linearization of class B amplifiers. | es_ES |
| dc.format.extent | 2 p. | es_ES |
| dc.language.iso | spa | es_ES |
| dc.rights | © 2002 URSI España | es_ES |
| dc.source | URSI 2002, XVII Simposium Nacional de la Unión Científica Internacional de Radio, Alcalá de Henares | es_ES |
| dc.title | Linealización a nivel de dispositivo mediante la utilización del comportamiento gran señal de los FET´s | es_ES |
| dc.type | info:eu-repo/semantics/conferenceObject | es_ES |
| dc.rights.accessRights | openAccess | es_ES |
| dc.type.version | publishedVersion | es_ES |
