Evolución de los mínimos de IMD en transistores HEMT´s: descripción usando una GM3 variante en el tiempo

Abstract

In this paper, an alternative description of the small- to large-signal intermodulation distortion (IMD) evolution in PHEMT amplifiers is presented. The influence of the device derivatives on the nulls of the in-band distortion components of the channel current, and the origin of the linearity sweet spots are evaluated using the timedependence of the drain to source current third order derivatives as a novel technique for IMD null prediction.