Reversible resistive switching and multilevel recording in La₀.₇Sr₀.₃MnO₃ thin films for low cost nonvolatile memories

Abstract

On the basis of a scanning probe microscopy strategy, we propose a combined methodology capable to program nonvolatile multilevel data and read them out in a noninvasive manner. In the absence of the common two-electrode cell geometry, this nanoscale approach permits, in addition, investigating the relevance of inherent film properties. We demonstrate the feasibility of modifying the local electronic response of La₀.₇Sr₀.₃MnO₃ to obtain nanostructures with switchable resistance embedded in low cost oxide thin films, which constitutes a promising approach for fabricating high density nonvolatile memories.