Modelo de gran-señal para transistores P-HEMT y MESFET de microondas incluyendo efectos ópticos

Abstract

As an extension of our previous works in the opticalmicrowave interaction field, this paper shows the result of the research on large signal dynamic behavior (pulsed I/V curves) of AlGaAs P-HEMT (pseudomorphic high electron mobility transistor) devices, in the overall I/V plane, when the incident optical input power is changed. A complete bias and optical power dependent of the large signal model for a P-HEMT is determined from experimental scattering parameters, DC and pulsed measurements. All derivatives of the model shown here are continuous for a realistic description of circuit distortion and intermodulation. Experimental results show very good agreement with the theoretical analysis.