| dc.contributor.author | Rodríguez Téllez, José | |
| dc.contributor.author | Ali, N. T. | |
| dc.contributor.author | Rafael Valdivia, Guillermo | |
| dc.contributor.author | Fernández Ibáñez, Tomás | |
| dc.contributor.author | Mediavilla Sánchez, Ángel | |
| dc.contributor.author | Tazón Puente, Antonio | |
| dc.contributor.other | Universidad de Cantabria | es_ES |
| dc.date.accessioned | 2013-10-02T07:25:20Z | |
| dc.date.available | 2013-10-02T07:25:20Z | |
| dc.date.issued | 2002-09 | |
| dc.identifier.uri | http://hdl.handle.net/10902/3495 | |
| dc.description.abstract | A new measurement procedure for observing the
dependence of the frequency dispersion effect on electric field
for GaAs MESFET/HEMT devices is presented. The new
procedure employs a statistically based pulse I/V measurement
system for observing the memory effect in these devices. The
results indicate, possibly for the first time, the true extent of the
effects of the traps in these devices. | es_ES |
| dc.format.extent | 2 p. | es_ES |
| dc.language.iso | spa | es_ES |
| dc.rights | © 2002 URSI España | es_ES |
| dc.source | URSI 2002, XVII Simposium Nacional de la Unión Científica Internacional de Radio, Alcalá de Henares | es_ES |
| dc.title | Dependencia de los estados trampa respecto al campo eléctrico en dispositivos MESFET y HEMT | es_ES |
| dc.type | info:eu-repo/semantics/conferenceObject | es_ES |
| dc.rights.accessRights | openAccess | es_ES |
| dc.type.version | publishedVersion | es_ES |
